Communication-concepts MPSH81 Bedienungsanleitung PDF herunterladen (Seite 2)

Electrical Characteristics TA = 25°C unless otherwise noted

OFF CHARACTERISTICS

ON CHARACTERISTICS

(BR)CEO

Collector-Emitter Breakdown Voltage* I

= 1.0 mA, I

= 0 20 V

(BR)CBO

Collector-Base Breakdown Voltage

= 10

A, I

= 0

20 V

(BR)EBO

Emitter-Base Breakdown Voltage

= 10

A, I

= 0

3.0 V

CBO

Collector Cutoff Current V

= 10 V, I

= 0 100 nA

EBO

Emitter Cutoff Current V

= 2.0 V, I

= 0 100 nA

DC Current Gain I

= 5.0 mA, V

= 10 V 60

CE(

sat

)

Collector-Emitter Saturation Voltage I

= 5.0 mA, I

= 0.5 mA 0.5 V

BE(

)

Base-Emitter On Voltage I

= 5.0 mA, V

= 10 V 0.9 V

SMALL SIGNAL CHARACTERISTICS

Current Gain - Bandwidth Product I

= 5.0 mA, V

= 10 V,

f = 100 MHz

600 MHz

Collector-Base Capacitance V

= 10 V, I

= 0, f = 1.0 MHz 0.85 pF

Collector Emitter Capcitance V

= 10 V, I

= 0, f = 1.0 MHz 0.65 pF

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.

Typical Characteristics

Symbol Parameter Test Conditions Min Max Units

PNP RF Transistor

(continued)

MPSH81 / MMBTH81

PNP(Is=10f Xti=3 Eg=1.11 Vaf=100 Bf=133.8 Ise=1.678p Ne=2.159 Ikf=.1658 Nk=.901 Xtb=1.5 Var=100 Br=1

Isc=9.519n Nc=3.88 Ikr=5.813 Rc=7.838 Cjc=2.81p Mjc=.1615 Vjc=.8282 Fc=.5 Cje=2.695p Mje=.3214 Vje=.7026

Tr=11.32n Tf=97.83p Itf=69.29 Xtf=599u Vtf=10)

Spice Model

DC Current Gain vs

Collector Current

0.1 1 10 100

100

120

140

160

180

200

I - COLLECTOR CURRENT (mA)

h - DC CURRENT GAIN

V = 1.0V

---

T = 125°C

T = 25°C

T = 55°C

Collector Saturation Voltage

vs Collector Current

0.1 1 10 100

0. 01

0. 02

0. 05

0.1

0.2

0.5

I - COLLECTOR CURRENT (mA)

V - COLLECTOR SAT. VOLTAGE (V)

T = 55°C

T = 25°C

T = 125°C

I = 10 I

CE( SAT )

1 2 3 4 5 6 7 ... 10 11

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