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MRFE6VP61K25HR6 MRFE6VP61K25HSR6

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFETs

These high ruggedness devices are designed for use in high VSWR industrial

(including laser and plasma exciters), broadcast (analog and digital), aerospace

and radio/land mobile applications. They are unmatched input and output

designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

! Typical Performance: V

=50Volts,I

= 100 mA

Signal Type

out

(W)

(MHz)

(dB)

(%)

IRL

(dB)

Pulsed (100 #sec,

20% Duty Cycle)

1250 Peak 230 24.0 74.0 -- 1 4

CW 1250 CW 230 22.9 74.6 -- 1 5

! Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc,

230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness,

1250 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μ sec

! Capable of 1250 Watts CW Operation

Features

! Unmatched Input and Output Allowing Wide Frequency Range Utilization

! Device can be used Single--Ended or in a Push--Pull Configuration

! Qualified Up to a Maximum of 50 V

Operation

! Characterized from 30 V to 50 V for Extended Power Range

! Suitable for Linear Application with Appropriate Biasing

! Integrated ESD Protection with Greater Negative Gate--Source Voltage

Range for Improved Class C Operation

! Characterized with Series Equivalent Large--Signal Impedance Parameters

! RoHS Compliant

! In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.

For R5 Tape and Reel options, see p. 12.

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain--Source Voltage V

DSS

--0.5, +125 Vdc

Gate--Source Voltage V

--6.0, +10 Vdc

Storage Temperature Range T

stg

-- 65 to +150 $C

Case Operating Temperature T

150 $C

Total Device Dissipation @ T

=25$C

Derate above 25 $C

1333

6.67

W/$C

Operating Junction Temperature

(1,2)

225 $C

Table 2. Thermal Characteristics

Characteristic Symbol Value

(2,3)

Unit

Thermal Resistance, Junction to Case

Case Temperature 66$C, 1250 W Pulsed, 100 #sec Pulse Width, 20% Duty Cycle, 100 mA, 230 MHz

Case Temperature 63$C, 1250 W CW, 100 mA, 230 MHz

0.03

0.15

$C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf

. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf

Select Documentation/Application Notes -- AN1955.

Document Number: MRFE6VP61K25H

Rev. 1, 1/2011

Freescale Semiconductor

Technical Data

1.8--600 MHz, 1250 W CW, 50 V

LATERAL N--CHANNEL

BROADBAND

RF POWER MOSFETs

MRFE6VP61K25HR6

MRFE6VP61K25HSR6

(Top View)

out

Figure 1. Pin Connections

out

CASE 375D--05, STYLE 1

NI--1230

MRFE6VP61K25HR6

CASE 375E--04, STYLE 1

NI--1230S

MRFE6VP61K25HSR6

PARTS ARE PUSH--PULL

& Freescale Semiconductor, Inc., 2010--2011.

ll rights reserved.

1 2 3 4 5 6 ... 12 13

Inhaltsverzeichnis

Seite 1 - MRFE6VP61K25HSR6

MRFE6VP61K25HR6 MRFE6VP61K25HSR61RF Device DataFreescale SemiconductorRF Power Field Effect TransistorsHigh Ruggedness N--ChannelEnhancement--Mode Lat

Seite 2

10RF Device DataFreescale SemiconductorMRFE6VP61K25HR6 MRFE6VP61K25HSR6

Seite 3

MRFE6VP61K25HR6 MRFE6VP61K25HSR611RF Device DataFreescale Semiconductor

Seite 4

12RF Device DataFreescale SemiconductorMRFE6VP61K25HR6 MRFE6VP61K25HSR6PRODUCT DOCUMENTATION AND SOFTWARERefer to the following documents and software

Seite 5 - TYPICAL CHARACTERISTICS

MRFE6VP61K25HR6 MRFE6VP61K25HSR613RF Device DataFreescale SemiconductorInformation in this document is provided solely to enable system and softwareim

Seite 6

2RF Device DataFreescale SemiconductorMRFE6VP61K25HR6 MRFE6VP61K25HSR6Table 3. ESD Protection CharacteristicsTest Methodology ClassHuman B ody Model (

Seite 7

MRFE6VP61K25HR6 MRFE6VP61K25HSR63RF Device DataFreescale SemiconductorFigure 2. MRFE6VP61K25HR6(HSR6) Test Circuit Schematic — PulsedZ23, Z24 1.251) x

Seite 8 - PACKAGE DIMENSIONS

4RF Device DataFreescale SemiconductorMRFE6VP61K25HR6 MRFE6VP61K25HSR6Figure 3. MRFE6VP61K25HR6(HSR6) Test Circuit C omponent Layout — Pulsed-- ------

Seite 9

MRFE6VP61K25HR6 MRFE6VP61K25HSR65RF Device DataFreescale SemiconductorTYPICAL CHARACTERISTICS5010200002010VDS, DRAIN--SOURCE VOLTAGE (VOLTS)Figure 4.

Seite 10 - Freescale Semiconductor

6RF Device DataFreescale SemiconductorMRFE6VP61K25HR6 MRFE6VP61K25HSR6TYPICAL CHARACTERISTICS25010990TJ, JUNCTION TEMPERATURE ($C)Figure 10. MTTF vers

Seite 11

MRFE6VP61K25HR6 MRFE6VP61K25HSR67RF Device DataFreescale SemiconductorZo=5*ZloadZsourcef = 230 MHzf = 230 MHzVDD=50Vdc,IDQ= 100 mA, Pout= 1250 W Peakf

Seite 12 - REVISION HISTOR Y

8RF Device DataFreescale SemiconductorMRFE6VP61K25HR6 MRFE6VP61K25HSR6PACKAGE DIMENSIONS

Seite 13 - How to Reach Us:

MRFE6VP61K25HR6 MRFE6VP61K25HSR69RF Device DataFreescale Semiconductor

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