Communication-concepts 2N5194 Bedienungsanleitung PDF herunterladen

October, 2006 − Rev. 12

1 Publication Order Number:

2N5194/D

2N5194, 2N5195

Preferred Devices

Silicon PNP Power

Transistors

These devices are designed for use in power amplifier and switching

circuits; excellent safe area limits. Complement to NPN 2N5191,

2N5192.

Features

• Pb−Free Packages are Available*

MAXIMUM RATINGS (Note 1)

Rating Symbol 2N5194 2N5195 Unit

Collector−Emitter Voltage V

CEO

60 80 Vdc

Collector−Base Voltage V

60 80 Vdc

Emitter−Base Voltage V

5.0 Vdc

Collector Current I

4.0 Adc

Base Current I

1.0 Adc

Total Device Dissipation @ T

= 25°C

Derate above 25°C

320

W/°C

Operating and Storage Junction

Temperature Range

, T

stg

–65 to +150 °C/W

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction−to−Case

3.12 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC registered data.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

Preferred devices are recommended choices for future use

and best overall value.

4 AMPERE

POWER TRANSISTORS

PNP SILICON

60 − 80 VOLTS

MARKING DIAGRAM

TO−225AA

CASE 77−09

STYLE 1

Y = Year

WW = Work Week

2N519x = Device Code

x = 4 or 5

G = Pb−Free Package

2N5195 TO−225 500 Units / Bulk

2N5195G TO−225

(Pb−Free)

500 Units / Bulk

Device Package

Shipping

2N5194 TO−225 500 Units / Bulk

2N5194G TO−225

(Pb−Free)

500 Units / Bulk

ORDERING INFORMATION

YWW

N519xG

1 2 3 4 5 6

Inhaltsverzeichnis

Seite 1 - Transistors

Seite 2

2N5194, 2N5195http://onsemi.com2ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)Characteristic Symbol Min Max UnitOFF CHARACTERI

Seite 3

2N5194, 2N5195http://onsemi.com3VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)Figure 2. Collector Saturation RegionIB, BASE CURRENT (mA)2.000.051.61.20.80.40.

Seite 4

2N5194, 2N5195http://onsemi.com4Figure 7. Switching Time Equivalent Test CircuitAPPROX−11 VTURN−ON PULSEVint1VBE(off)TURN−OFF PULSEVint3t2APPROX−11 VV

Seite 5

2N5194, 2N5195http://onsemi.com5Figure 12. Thermal Responset, TIME OR PULSE WIDTH (ms)1.00.010.010.70.50.30.20.10.070.050.030.020.02 0.03r(t), EFFECTI

Seite 6

2N5194, 2N5195http://onsemi.com6PACKAGE DIMENSIONSTO−225CASE 77−09ISSUE ZSTYLE 1:PIN 1. EMITTER2. COLLECTOR3. BASENOTES:1. DIMENSIONING AND TOLERANCIN

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