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© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 14
1 Publication Order Number:
2N6487/D
2N6487, 2N6488, (NPN)
2N6490, 2N6491 (PNP)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and
switching applications.
Features
• DC Current Gain Specified to 15 Amperes −
h
FE
= 20−150 @ I
C
= 5.0 Adc
= 5.0 (Min) @ I
C
= 15 Adc
• Collector−Emitter Sustaining Voltage −
V
CEO(sus)
= 60 Vdc (Min) − 2N6487, 2N6490
= 80 Vdc (Min) − 2N6488, 2N6491
• High Current Gain − Bandwidth Product
f
T
= 5.0 MHz (Min) @ I
C
= 1.0 Adc
• TO−220AB Compact Package
• Pb−Free Packages are Available*
MAXIMUM RATINGS (Note 1)
Rating
Symbol Value Unit
Collector−Emitter Voltage
2N6487, 2N6490
2N6488, 2N6491
V
CEO
60
80
Vdc
Collector−Base Voltage
2N6487, 2N6490
2N6488, 2N6491
V
CB
70
90
Vdc
Emitter−Base Voltage V
EB
5.0 Vdc
Collector Current − Continuous I
C
15 Adc
Base Current I
B
5.0 Adc
Total Power Dissipation @ T
C
= 25_C
Derate above 25_C
P
D
75
0.6
W
W/°C
Total Power Dissipation @ T
A
= 25_C
Derate above 25_C
P
D
1.8
0.014
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−65 to +150 °C
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
1.67
_C/W
Thermal Resistance, Junction−to−Ambient
R
q
JA
70
_C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
15 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−80 VOLTS, 75 WATTS
TO−220AB
CASE 221A
STYLE 1
1
2
3
4
http://onsemi.com
MARKING
DIAGRAM
2N64xxG
AYWW
2N64xx = Specific Device Code
xx = See Table on Page 5
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
See detailed ordering, marking, and shipping information in
the package dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
Seitenansicht 0
1 2 3 4 5 6

Inhaltsverzeichnis

Seite 1 - Plastic Power Transistors

© Semiconductor Components Industries, LLC, 2011October, 2011 − Rev. 141 Publication Order Number:2N6487/D2N6487, 2N6488, (NPN)2N6490, 2N6491 (PNP)Co

Seite 2 - ELECTRICAL CHARACTERISTICS (T

2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP)http://onsemi.com2804020020 40 80 100 120 160Figure 1. Power DeratingTC, CASE TEMPERATURE (°C)PD, POWER DISS

Seite 3 - Figure 4. Thermal Response

2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP)http://onsemi.com3Figure 2. Switching Time Test Circuit1000Figure 3. Turn−On TimeIC, COLLECTOR CURRENT (AMP)

Seite 4

2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP)http://onsemi.com4SECOND BREAKDOWN LIMITEDBONDING WIRE LIMITEDTHERMALLY LIMITED @ TC = 25°C20Figure 5. Activ

Seite 5 - Figure 10. “On” Voltages

2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP)http://onsemi.com5VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)5.0 100IC = 1.

Seite 6 - PACKAGE DIMENSIONS

2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP)http://onsemi.com6PACKAGE DIMENSIONSTO−220CASE 221A−09ISSUE AGNOTES:1. DIMENSIONING AND TOLERANCING PER ANSI

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